Precision-Engineered Ingots for Next-Generation Technologies.

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1) MONO-CRYSTALLINE SILICON INGOTS (CZ/MCZ)

Applications:

TOPCon, HJT, IBC, high-performance ICs, sensors, EV electronics, chip substrates.

Specifications:

  • Diameter: 6–18 inches
  • Resistivity: 0.001 to 1000 Ω·cm
  • Dopants: Boron, Phosphorus, Gallium
  • Crystal Orientation: <100>, <111>
  • Ultra-low oxygen & carbon

Features:

  • High crystal uniformity
  • Excellent wafer slicing yield
  • Stable electrical properties

2) POLY-CRYSTALLINE SILICON INGOTS

Applications:

  • Mainstream PV module production

Specifications:

  • High uniformity
  • Excellent slicing stability
  • Lower thermal expansion stress

Features:

  • High mechanical strength
  • Lower thermal stress
  • Excellent mass-production stability

3) P-TYPE INGOTS

For standard PV modules and general electronics.

Ideal for:

  • Standard PV applications
  • Traditional solar cell manufacturing

N-TYPE INGOTS

Ideal for:

  • TOPCon
  • HJT
  • IBC
  • Semiconductor-grade applications
  • Low degradation, high carrier lifetime

4) N-TYPE INGOTS

For advanced solar and chip technologies requiring low degradation and high carriers.

CUSTOM INGOT MANUFACTURING

We manufacture ingots based on client:

  • Resistivity
  • Dopants
  • Orientation
  • Diameter
  • Crystal length
  • Oi/Ci levels